The new Bi-directional Silicon Controlled Rectifier structure has already moved into mass production within the company’s 0.13-micron BCD process. Unlike conventional electrostatic discharge safeguards that only address manufacturing-related shocks, this system-level solution manages continuous electrical stress during active vehicle operation, including compliance with the rigorous ISO 10605 standard.
This design offers engineers flexible trigger-voltage adjustments and high-current handling within a compact footprint. By replacing external transient voltage suppressor diodes with an internal on-chip control mechanism, the foundry allows automotive designers to reclaim valuable board space and simplify circuit architecture. CEO Derek D. Lee noted that the technology marks a shift in market priorities, where robust electromagnetic compatibility has become as critical as component-level durability. Moving forward, the company intends to integrate these protection capabilities across its high-voltage LDMOS and BJT platforms to support power management chips and motor drivers.
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